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>>> ST-Microelectronics >>> 13NM60N 데이터시트

13NM60N-2011 데이터시트

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Description
This device is a N-channel Power MOSFETs made using the second generation of MDmesh™ technology. This revolutionary transistor associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance

Application
   Switching applications

 

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