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2SC4703 데이터시트

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2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER Renesas
Renesas Electronics Renesas
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DESCRIPTION
The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE= 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface mount type plastic package, power minimold (SOT-89).

FEATURES
• Low distortion, low voltage: IM2= 55 dBc TYP., IM3= 76 dBc TYP. @ VCE= 5 V, IC= 50 mA, VO= 105 dBµV/75Ω
• Large Ptot: Ptot= 1.8 W (Mounted on double-sided copper-clad 16 cm2 ×0.7 mm (t) ceramic substrate)
• Small package : 3-pin power minimold package

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