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74CB3Q3245RGYRG4 데이터시트

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74CB3Q3245RGYRG4 8-BIT FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH TI
Texas Instruments TI
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DESCRIPTION/ORDERING INFORMATION
The SN74CB3Q3245 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3245 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

FEATURES
• High-Bandwidth Data Path (up to 500 MHz (1))
• Equivalent to IDTQS3VH384 Device
• 5-V Tolerant I/Os With Device Powered Up or Powered Down
• Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 4 Ω Typ)
• Rail-to-Rail Switching on Data I/O Ports
   – 0- to 5-V Switching With 3.3-V VCC
   – 0- to 3.3-V Switching With 2.5-V VCC
• Bidirectional Data Flow With Near-Zero Propagation Delay
• Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 3.5 pF Typ)
• Fast Switching Frequency (fOE = 20 MHz Max)
• Data and Control Inputs Provide Undershoot Clamp Diodes
• Low Power Consumption (ICC = 1 mA Typical)
• VCC Operating Range From 2.3 V to 3.6 V
• Data I/Os Support 0- to 5-V Signaling Levels
   (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
• Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
• Ioff Supports Partial-Power-Down Mode Operation
• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
• ESD Performance Tested Per JESD 22
   – 2000-V Human-Body Model (A114-B, Class II)
   – 1000-V Charged-Device Model (C101)
• Supports Both Digital and Analog
   Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

 

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