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FQD3N50C 데이터시트

FQD3N50C 500V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
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FQD3N50C image

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

• 2.5A, 500V, RDS(on) = 2.5Ω @VGS = 10 V
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 8.5pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant

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