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IS41C16100C 데이터시트

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IS41C16100C 1Mx16 16Mb DRAM WITH EDO PAGE MODE ISSI
Integrated Silicon Solution ISSI
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DESCRIPTION
TheISSIIS41C16100CandIS41LV16100Care1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer a cycle access called Extended Data Out (EDO) Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 30 ns per 16-bit word. It is asynchronous, as it does not require a clock signal input to synchronize commands and I/O.

FEATURES
•  TTL compatible inputs and outputs; tristate I/O
•  Refresh Interval:
    —  Auto refresh Mode: 1,024 cycles /16 ms
    —  RAS-Only, CAS-before-RAS (CBR), and Hidden
    — Self refresh Mode: 1,024 cycles /128 ms
•  JEDEC standard pinout
•  Single power supply:
    5V ± 10% (IS41C16100C)
    3.3V ± 10% (IS41LV16100C)
•  Byte Write and Byte Read operation via two CAS
•  Industrial Temperature Range: -40°C to +85°C

 

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