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>>> ISSI >>> IS41LV16105B 데이터시트

IS41LV16105B 데이터시트

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IS41LV16105B
ISSI
Integrated Silicon Solution ISSI
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DESCRIPTION
The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV16105B ideal for use in 16-, 32-bit wide data bus systems.

FEATURES
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval:
    — 1,024 cycles/16 ms
• Refresh Mode:
    — RAS-Only, CAS-before-RAS (CBR), and Hidden
• JEDEC standard pinout
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Extended Temperature Range: -30oC to +85oC
• Industrial Temperature Range: -40oC to +85oC
• Lead-free available

 

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