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>>> ISSI >>> IS61WV12816DALL 데이터시트

IS61WV12816DALL 데이터시트

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IS61WV12816DALL
ISSI
Integrated Silicon Solution ISSI
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  2008  
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DESCRIPTION
TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

FEATURES
HIGH SPEED: (IS61/64WV12816DALL/DBLL)
• High-speed access time: 8, 10, 12, 20 ns
• Low Active Power: 135 mW (typical)
• Low Standby Power: 12 μW (typical) CMOS standby

LOW POWER: (IS61/64WV12816DALS/DBLS)
• High-speed access time: 25, 35 ns
• Low Active Power: 55 mW (typical)
• Low Standby Power: 12 μW (typical) CMOS standby
• Single power supply
    — VDD 1.65V to 2.2V (IS61WV12816DAxx)
    — VDD 2.4V to 3.6V (IS61/64WV12816DBxx)
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial and Automotive temperature support
• Lead-free available

 

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