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KM416C1200B 데이터시트

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KM416C1200B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode Samsung
Samsung Samsung
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DESCRIPTION
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-5,-6 or -7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family.

FEATURES
• Part Identification
    - KM416C1000B/B-L (5V, 4K Ref.)
    - KM416C1200B/B-L (5V, 1K Ref.)
    - KM416V1000B/B-L (3.3V, 4K Ref.)
    - KM416V1200B/B-L (3.3V, 1K Ref.)
• Active Power Dissipation
• Refresh Cycles
• Perfomance Range
• Fast Page Mode operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II) 400mil packages
• Single +5V¡¾10% power supply (5V product)
• Single +3.3V¡¾0.3V power supply (3.3V product)

 

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