Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
>>> ST-Microelectronics >>> LET8180 데이터시트

LET8180 데이터시트

부품명상세내역제조사
LET8180 RF POWER TRANSISTORS Ldmos Enhanced Technology ST-Microelectronics
STMicroelectronics ST-Microelectronics
Other PDF  not available.
PDF DOWNLOAD     
LET8180 image

DESCRIPTION
The LET8180 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET8180 is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for base station applications requiring high linearity.

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION, PUSH-PULL
• POUT = 220 W with 17 dB TYP. gain @ 860 MHz
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
• ESD PROTECTION

 

LET8180 관련 기타 제조 업체 검색

부품명상세내역PDF제조사
PTF081301E Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz 보기 Infineon Technologies
PTFA192401E Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz 보기 Infineon Technologies
2508051107Y0 RF Power LDMOS Transistors 보기 Freescale Semiconductor
MRFE6VP8600HR6 RF Power LDMOS Transistors 보기 Freescale Semiconductor
LQ801 SILICON GATE ENHANCEMENT MODE RF POWER TRANSISTOR LDMOS 보기 Polyfet RF Devices
LK822 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 보기 Polyfet RF Devices
L2801 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 보기 Polyfet RF Devices
LK701 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 보기 Polyfet RF Devices
L2721 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 보기 Polyfet RF Devices
L125 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 보기 Polyfet RF Devices

Share Link : 
All Rights Reserved© datasheetq.com 2015 - 2019  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]