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LH532100B 데이터시트

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LH532100B CMOS 2M (256K × 8) MROM Sharp
Sharp Electronics Sharp
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DESCRIPTION
The LH532100B is a 2M-bit mask-programmable ROM organized as 262,144 × 8 bits. It is fabricated using silicon-gate CMOS process technology.

FEATURES
• 262,144 words × 8 bit organization
• Access time: 150 ns (MAX.)
• Low-power consumption:
    Operating: 275 mW (MAX.)
    Standby: 550 µW (MAX.)
• Static operation
• Mask-programmable OE/OE and OE1/OE1/DC
• TTL compatible I/O
• Three-state outputs
• Single +5 V power supply
• Packages:
    32-pin, 600-mil DIP
    32-pin, 525-mil SOP
    32-pin, 450-mil QFJ (PLCC)
    32-pin, 8 × 20 mm2 TSOP (Type I)
    32-pin, 400-mil TSOP (Type II)
• JEDEC standard EPROM pinout (DIP)

 

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