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M29F002BB 데이터시트

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SUMMARY DESCRIPTION
The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B is fully backward compatible with the M29F002.

■ SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
■ ACCESS TIME: 45 ns
■ PROGRAMMING TIME
  – 8 µs by Byte typical
■ 7 MEMORY BLOCKS
   – 1 Boot Block (Top or Bottom Location)
   – 2 Parameter and 4 Main Blocks
■ PROGRAM/ERASE CONTROLLER
   – Embedded Byte Program algorithm
   – Embedded Multi-Block/Chip Erase algorithm
   – Status Register Polling and Toggle Bits
■ ERASE SUSPEND and RESUME MODES
   – Read and Program another Block during Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
   – Faster Production/Batch Programming
■ TEMPORARY BLOCK UNPROTECTION MODE
■ LOW POWER CONSUMPTION
   – Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATA RETENTION
   – Defectivity below 1 ppm/year
■ ELECTRONIC SIGNATURE
   – Manufacturer Code: 20h
   – Top Device Code M29F002BT: B0h
   – Top Device Code M29F002BNT: B0h
   – Bottom Device Code M29F002BB: 34h
   – Bottom Device Code M29F002BNB: 34h

 

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