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M29W022BB 데이터시트

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SUMMARY DESCRIPTION
The M29W022B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

■ SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
   PROGRAM, ERASE and READ OPERATIONS
■ ACCESS TIME: 55ns
■ PROGRAMMING TIME
   – 10µs by Byte typical
■ 7 MEMORY BLOCKS
   – 1 Boot Block (Top or Bottom Location)
   – 2 Parameter and 4 Main Blocks
■ PROGRAM/ERASE CONTROLLER
   – Embedded Byte Program algorithm
   – Embedded Multi-Block/Chip Erase algorithm
   – Status Register Polling and Toggle Bits
■ ERASE SUSPEND and RESUME MODES
   – Read and Program another Block during
      Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
   – Faster Production/Batch Programming
■ LOW POWER CONSUMPTION
   – Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per
   BLOCK
■ 20 YEARS DATA RETENTION
   – Defectivity below 1 ppm/year
■ ELECTRONIC SIGNATURE
   – Manufacturer Code: 20h
   – Top Device Code M29W022BT: C4h
   – Bottom Device Code M29W022BB: C3h

 

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