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>>> Mitsubishi >>> ML976H10 데이터시트

ML976H10 데이터시트

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ML976H10
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi
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DESCRIPTION
ML9XX10 series are InGaAsP high power laser diodes which provide a stable, single transverse mode oscillation with emission wavelength of 1550nm and pulse light output of 200mW.

Applications
   OTDR systems

 

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상세내역
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제조사
InGaAsP STRAINED MQW-DFB PULSED LASER DIODE MODULE FOR 1310 nm OTDR APPLICATION
NEC => Renesas Technology
MITSUBISHI LASER DIODES 1310nm InGaAsP FP LASER DIODES
Unspecified
MITSUBISHI LASER DIODES 1310nm InGaAsP FP LASER DIODES
Mitsumi
NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
California Eastern Laboratories.
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION
NEC => Renesas Technology
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION
NEC => Renesas Technology
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION
NEC => Renesas Technology
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION
NEC => Renesas Technology
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION
NEC => Renesas Technology
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
NEC => Renesas Technology

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