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RJP30E2 데이터시트

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1. Trench gate technology (G5H series)
2. Low collector to emitter saturation voltage  VCE(sat)= 1.7 V typ
3. High speed switching  tf = 150 ns typ
4. Low leak current  ICES= 1 μA max
5. Isolated package TO-220FL

RJP30E2

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상세내역
PDF
제조사
Low VCE(sat) IGBT High Speed IGBT
IXYS CORPORATION
Low VCE(sat) IGBT High speed IGBT
IXYS CORPORATION
Low VCE(sat) IGBT High speed IGBT
IXYS CORPORATION
Low VCE(sat) IGBT High Speed IGBT
IXYS CORPORATION
Low VCE(sat) IGBT High speed IGBT
IXYS CORPORATION
Low VCE(sat) IGBT High speed IGBT
IXYS CORPORATION
Low Vce(sat) IGBT / High Speed IGBT
IXYS CORPORATION
Low VCE(sat) IGBT with Diode High speed IGBT with Diode
IXYS CORPORATION
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
IXYS CORPORATION
Low VCE(sat) High speed IGBT with Diode
IXYS CORPORATION

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