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STGB7NB60KD-2004 데이터시트

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DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability.

■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
■ LOW ON-VOLTAGE DROP (Vcesat)
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ OFF LOSSES INCLUDE TAIL CURRENT
■ HIGH FREQUENCY OPERATION
■ SHORT CIRCUIT RATED
■ CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE

APPLICATIONS
■ HIGH FREQUENCY MOTOR CONTROLS
■ SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

 

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N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET
Unspecified
N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH™ Power MOSFET
STMicroelectronics
Short Circuit Rated UltraFast IGBT VCES= 600V VCE(on) typ. =2.27V @VGE= 15V, IC= 9.0A
International Rectifier
N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH MOSFET
Unspecified
N - CHANNEL 800V - 1.8Ω - 5A - TO-220/TO-220FP PowerMESH™ MOSFET
Unspecified
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
International Rectifier
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
International Rectifier
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
International Rectifier
IGBT SIP MODULE Short Circuit Rated Fast IGBT
International Rectifier
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
International Rectifier

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