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STW6NC90Z 데이터시트

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DESCRIPTION
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur passed on-resistance per unit area while integrating back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capability with higher ruggedness performance as request ed by a large variety of single-switch applications.

■ TYPICAL RDS(on) = 2.1Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ GATE-TO-SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT

 

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N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH™ Power MOSFET
STMicroelectronics
N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH™ Power MOSFET
New Jersey Semiconductor
N-channel 800V - 0.78Ω- 9A - TO-220/FP-TO-247 Zener-protected superMESH MOSFET
Unspecified
N - CHANNEL 500V - 0.33Q - 14A - TO-247 PowerMESH™ MOSFET
New Jersey Semiconductor
N-channel 500V - 0.34Ω - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESHTM Power MOSFET
Unspecified
N CHANNEL MOSFET, 900V, 4.7A TO-247
Vishay Semiconductors
N-CHANNEL 20A - 600V TO-247 PowerMESH™ IGBT
New Jersey Semiconductor
N-channel 800V - 1.5Ω - 5.2A - TO-220/TO-220FP/D2PAK/I2PAK Zener-protected SuperMESH™ Power MOSFET
STMicroelectronics
N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET
Unspecified
N-Channel Enhancement type HVX-2 Series Power MOSFET 900V 10A
Shindengen

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