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부품명(s) : SPSE13007-2 E13007-2
ETC
Unspecified
상세내역 : High Voltage Power Transistor

[SAN PU SEMICONDUCTOR]

FEATURES:
   High Voltage Capability
   High Speed Switching
   Wide SOA

APPLICATIONS:
   Flourscent Lamp
   Electronic Ballast
   Electronic Transformer

Fairchild
Fairchild Semiconductor
상세내역 : KSE13007, KSE13006 / High Voltage NPN Transistor

KSE13007, KSE13006, E13007-2 Datasheet Information.

부품명(s) : E13007-2 SPSE13007-2
ETC1
Unspecified
상세내역 : High Voltage Power Transistor

[SAN PU SEMICONDUCTOR]

상세내역 : 100mA Low Power LDO

General Description

The HT75XX-2 series is a set of three-terminal low Power High Voltage implemented in CMOS technology. They can deliver 100mA output current and allow an input Voltage as High as 24V. They are available with several fixed output Voltages ranging from 2.1V to 12.0V.  CMOS technology ensures low Voltage drop and low quiescent current.

Although designed primarily as fixed Voltage regulators, these devices can be used with external components to obtain variable Voltages and currents.



Features

• Low Power consumption

• Low Voltage drop

• Low temperature coefficient

High input Voltage (up to 24V)

High output current : 100mA

• Output Voltage accuracy: tolerance ±1%

• TO92, SOT89 and SOT23-5 packages



Applications

• Battery-Powered equipment

• Communication equipment

• Audio/Video equipment



 


상세내역 : 10...30 Watt AC-DC Converters

Input Voltage ranges 85...265 V AC 88…168 V DC
1 or 2 outputs up to 48 V DC
4300 V DC I/O electric strength test Voltage

• Class II equipment (double insulation)
• Short circuit protection
• Compact, low cost solution

상세내역 : TinyPowerVoltage Detector

General Description

The HT70xxA-2 series devices area set of three terminal low Power Voltage detectors implemented in CMOS technology. Each Voltage detector in the series detects a particular fixed Voltage ranging from 2.2V to 8.2V. The Voltage detectors consist of a High-precision and low Power consumption standard Voltage source as well as a comparator, hysteresis circuit, and an output driver. CMOS technology ensures low Power consumption. Although designed primarily as fixed Voltage detectors, these devices can be used with external components to detect user specified threshold Voltages.



Features

• Low Power consumption

• Low temperature coefficient

High input Voltage range (up to 24V)

• Output Voltage accuracy: tolerance ±1%

• Built-in hysteresis characteristic

• TO92, SOT89 and SOT23-5 package



Applications

• Battery checkers

• Level selectors

Power failure detectors

• Microcomputer reset

• Battery memory backup

• Non-volatile RAM signal storage protectors



 


부품명(s) : PTB20235
Ericsson
Ericsson
상세내역 : 70 Watts, 2.1–2.2 GHz Wideband CDMA Power Transistor

Description
The 20235 is a class AB, NPN, push-pull RF Power Transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP minimum output Power, it is specifically intended for operation as a final stage in Wide CDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.

• 70 Watts, 2.1–2.2 GHz
• Class AB Characteristics
• Gold Metallization
• Silicon Nitride Passivated

상세내역 : 30mA Low Power LDO

General Description

The HT71xx-2 series is a set of three-terminal low Power High Voltage regulators implemented in CMOS

technology. They allow input Voltages as High as 30V. They are available with several fixed output Voltages

ranging from 2.1V to 5.0V. CMOS technology ensures low Voltage drop and low quiescent current.



Features

• Low Power consumption

• Low Voltage drop

• Low temperature coefficient

• High input Voltage (up to 30V)

• Output Voltage accuracy: tolerance ±1%

• TO92, SOT89 and SOT23-5 package



Applications

• Battery-Powered equipment

• Communication equipment

• Audio/Video equipment


부품명(s) : PTB20245
Ericsson
Ericsson
상세내역 : 35 Watts, 2.1–2.2 GHz Wide-Band CDMA Power Transistor

Description
The 20245 is a class AB, NPN common emitter RF Power Transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output Power for PEP applications, it is specifically intended for operation as a final or driver stage in Wide CDMA or TDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.

• 35 Watts, 2.1–2.2 GHz
• Class AB Characteristics
• Gold Metallization
• Silicon Nitride Passivated

상세내역 : MicroPower Voltage Reference

DESCRIPTION
The LM185-2.5 is a two-terminal band gap reference diode that has been designed for applications which require precision performance with microPower operation. The device provides guaranteed operation specifications at currents as low as 20µA. The nominal Voltage is 2.5V with both 1% and 2% tolerances available. Some additional features are: maximum dynamic impedance of 1Ω, low noise and excellent stability over time and temperature. The advanced design, processing and testing techniques make Linear’s LM185-2.5 a superior choice over previous designs. A circuit for cold junction compen sation of a thermocouple is shown below.

FEATURES
■ 20µA to 20mA Operating Range
■ Guaranteed 1% Initial Voltage Tolerance
■ Guaranteed 1Ω Dynamic Impedance
■ Very Low Power Consumption

APPLICATIONS
■ Portable Meter References
■ Portable Test Instruments
■ Battery-Operated Systems
■ Panel Meters
■ Current Loop Instrumentation

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