General Description
These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
⢠1.3 A, 100 V. RDS(ON) = 480 m⦠@ VGS = 10 V
RDS(ON) = 530 m⦠@ VGS = 6 V
⢠Fast switching speed
⢠Low gate charge (3.7nC typical)
⢠High performance trench technology for extremely
low RDS(ON)
⢠High power and current handling capability
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