General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
⢠6.3 A, 100 V.
RDS(ON) = 32 m⦠@ VGS = 10 V
RDS(ON) = 35 m⦠@ VGS = 6 V
⢠Low gate charge (57 nC typical)
⢠Fast switching speed
⢠High performance trench technology for extremely low RDS(ON)
⢠High power and current handling capability
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