General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductorâs advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V â 20V).
Features
⢠â11 A, â40 V RDS(ON) = 0.013 Ω @ VGS = â10 V
RDS(ON) = 0.017 Ω @ VGS = â4.5 V
⢠Fast switching speed
⢠High performance trench technology for extremely
low RDS(ON)
⢠High power and current handling capability
Applications
⢠Power management
⢠Load switch
⢠Battery protection
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