General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductorâs advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V â 25V).
Features
· â5 A, â30 V RDS(ON) = 55 mW @ VGS = â10 V
RDS(ON) = 95 mW @ VGS = â4.5 V
· Low gate charge (6nC typical)
· Fast switching speed
· High performance trench technology for extremely low RDS(ON)
· High power and current handling capability
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