General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features
• 8.4 A, 30 V.
   RDS(ON) = 22 mW @ VGS = 10 V
   RDS(ON) = 30 mW @ VGS = 4.5 V
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability