General Description
The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676AS includes an integrated Schottky diode using Fair childâs monolithic SyncFET technology.
Features
â 14.5 A, 30 V.
RDS(ON) max= 6.0 m⦠@ VGS = 10 V
RDS(ON) max= 7.25 m⦠@ VGS = 4.5 V
â Includes SyncFET Schottky body diode
â Low gate charge (45nC typical)
â High performance trench technology for extremely low
RDS(ON) and fast switching
â High power and current handling capability
Applications
â DC/DC converter
â Low side notebook
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