General Description
The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky diode using Fairchildâs monolithic SyncFET technology. The performance of the FDS6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode.
Features
⢠11.5 A, 30 V. RDS(ON) max= 10.0 m⦠@ VGS = 10 V
RDS(ON) max= 12.5 m⦠@ VGS = 4.5 V
⢠Includes SyncFET Schottky body diode
⢠Low gate charge (22nC typical)
⢠High performance trench technology for extremely low RDS(ON) and fast switching
⢠High power and current handling capability
Applications
⢠DC/DC converter
⢠Low side notebooks
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