General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductorâs advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
⢠7.5 A, 20 V.
RDS(ON) = 18 mW @ VGS = 4.5 V
RDS(ON) = 24 mW @ VGS = 2.5 V
⢠Low gate charge (12 nC typical)
⢠High performance trench technology for extremely low RDS(ON)
⢠High power and current handling capability
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