General Description
These N & P-Channel MOSFETs are produced using Fairchild Semiconductorâs advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
⢠Q1 4.1 A, 30V.
RDS(ON) = 80 mW @ VGS = 10 V
RDS(ON) = 130 mW @ VGS = 4.5 V
⢠Q2 â3.4 A, 30V.
RDS(ON) = 130 mW @ VGS = â10 V
RDS(ON) = 200 mW @ VGS = â4.5 V
⢠Low gate charge
⢠High performance trench technology for extremely low RDS(ON).
⢠High power and handling capability in a widely used
surface mount package.
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