FQB16N25 데이터시트 - Fairchild Semiconductor
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FQB16N25
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Fairchild Semiconductor
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchildâs proprietary, planar stripe, DMOS technology.
Features
⢠16A, 250V, RDS(on) = 0.23 ⦠@VGS = 10 V
⢠Low gate charge ( typical 27 nC)
⢠Low Crss ( typical 23 pF)
⢠Fast switching
⢠100% avalanche tested
⢠Improved dv/dt capability
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