제조사
STMicroelectronics
DESCRIPTION
This power MOSFET is designed using the companyâs consolidated strip layout-based MESH OVERLAYï process. This technology matches and improves the performances compared with standard parts from various sources.
â TYPICAL RDS(on) = 2.5 â¦
â EXTREMELY HIGH dv/dt CAPABILITY
â 100% AVALANCHE TESTED
â VERY LOW INTRINSIC CAPACITANCES
â GATE CHARGE MINIMIZED
APPLICATIONS
â HIGH CURRENT, HIGH SPEED SWITCHING
â SWITH MODE POWER SUPPLIES (SMPS)
â DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER
N-Channel UniFET⢠II MOSFET 500 V, 2.5 A, 2.5 Ω
ON Semiconductor
N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET
Silikron Semiconductor Co.,LTD.
N-Channel 2.5-V (G-S) MOSFET
Vishay Semiconductors
N-Channel 2.5-V (G-S) MOSFET
Vishay Semiconductors
N-Channel 1.25-W, 2.5-V MOSFET
Vishay Semiconductors
N-Channel 2.5-V (G-S) MOSFET
Vishay Semiconductors
N-Channel 1.25-W, 2.5-V MOSFET ( Rev : 2004 )
Vishay Semiconductors
N-Channel 1.25-W, 2.5-V MOSFET
Vishay Semiconductors
N-Channel 2.5-V (G-S) MOSFET
Vishay Semiconductors
N-channel TO-220 MOSFET
Xian Semipower Electronic Technology Co., Ltd.