HYB3118165BSJ-60 데이터 시트보기 (PDF) - Infineon Technologies

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HYB3118165BSJ-60

1M × 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO)

Infineon Technologies 

HYB 5118165BSJ/BST-50/-60

HYB 3118165BSJ/BST-50/-60

1M × 16 EDO-DRAM

AC Characteristics (cont’d) 5, 6

TA = 0 to 70 °C, VCC = 5 V ± 10 % / VCC = 3.3 V ± 0.3 V, tT = 2 ns

Parameter

Symbol

Limit Values

Unit Note

-50

-60

min. max. min. max.

Access time from CAS precharge

Output data hold time

RAS pulse width in EDO mode

CAS precharge to RAS delay

OE setup time prior to CAS

tCPA

tCOH

tRAS

tRHCP

tOES

–

27 –

32 ns 7

5 – 5 – ns

50 200k 60 200k ns

27 – 32 – ns

5–5–5–

Hyper Page Mode (EDO) Read-Modify-Write Cycle

Hyper page mode (EDO) read-write cycle time tPRWC 58 –

68 –

ns

CAS precharge to WE

tCPWD

41

–

49 –

ns

CAS-before-RAS Refresh Cycle

CAS setup time

CAS hold time

RAS to CAS precharge time

Write to RAS precharge time

Write hold time referenced to RAS

tCSR

10 – 10 – ns

tCHR

10 – 10 – ns

tRPC

5 – 5 – ns

tWRP

10 –

10 –

ns

tWRH

10 –

10 –

ns

CAS-before-RAS Counter Test Cycle

CAS precharge time (CAS-before-RAS

counter test cycle)

tCPT

35 – 40 – ns

Semiconductor Group

9

1998-10-01

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