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BDV67(2012) 데이터 시트보기 (PDF) - Comset Semiconductors
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BDV67
(Rev.:2012)
NPN SILICON DARLINGTONS POWER TRANSISTORS
Comset Semiconductors
BDV67 Datasheet PDF : 5 Pages
1
2
3
4
5
BDV67-A-B-C-D
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
V
CE
= 30 V, I
B
= 0
BDV67
-
-
I
CEO
Collector Cutoff
Current
V
CE
= 40 V, I
B
= 0
V
CE
= 50 V, I
B
= 0
V
CE
= 60 V, I
B
= 0
BDV67A -
-
BDV67B -
-
1 mA
BDV67C -
-
V
CE
= 75 V, I
B
= 0
BDV67D -
-
BDV67
-
-
BDV67A -
-
I
EBO
Emitter Cutoff Current V
BE
= 5 V, I
c
= 0
BDV67B -
BDV67C -
- 5.0 mA
-
BDV67D -
-
V
CB
= 80 V BDV67
-
-
V
CB
= 100 V BDV67A
-
-
I
B
= 0
T
j
=25°C
V
CB
= 120 V
V
CB
= 140 V
BDV67B
BDV67C
-
-
-
-
1
I
CBO
Collector-Base Cutoff
Current
V
CB
= 160 V BDV67D
-
-
V
CB
= 40 V BDV67
-
-
mA
I
B
= 0
V
CB
= 50 V BDV67A
-
-
T
j
=150° V
CB
= 60 V BDV67B
-
-
4
C
V
CB
= 70 V BDV67C
-
-
V
CB
= 80 V BDV67D
-
-
BDV67
60
-
-
V
CEO
Collector-emitter
Breakdown Voltage (*)
I
C
= 30 mA, I
B
= 0
BDV67A 80 -
-
BDV67B 100 -
-
BDV67C 120 -
-
V
BDV67D 150 -
-
V
CE
= 3 V, I
C
= 1 A
BDV67
BDV67A
-
3000
-
h
FE
DC Current Gain (*)
V
CE
= 3 V, I
C
= 10 A
BDV67B
1000
-
-
-
V
CE
= 3 V, I
C
= 16 A
BDV67C
BDV67D
-
1000
-
BDV67
V
CE(SAT)
Collector-Emitter
saturation Voltage (*)
I
C
= 10 A, I
B
= 40 mA
BDV67A
BDV67B
BDV67C
-
-
2
V
BDV67D
26/09/2012
COMSET SEMICONDUCTORS
3/5
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