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BS62LV4007 데이터 시트보기 (PDF) - Brilliance Semiconductor
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BS62LV4007
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Brilliance Semiconductor
BS62LV4007 Datasheet PDF : 10 Pages
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BSI
READ CYCLE2
(1,3,4)
CE
D
OUT
READ CYCLE3
(1,4)
ADDRESS
OE
CE
D
OUT
t
ACS
(5)
t
CLZ
t
RC
t
AA
t
OE
t
OLZ
t
ACS
(5)
t
CLZ
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE = V
IL
.
3. Address valid prior to or coincident with CE transition low.
4. OE = V
IL
.
5. The parameter is guaranteed but not 100% tested.
BS62LV4007
t
(5)
CHZ
t
OH
t
OHZ
(5)
t
(1,5)
CHZ
R0201-BS62LV4007
5
Revision 1.1
Jan. 2004
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