BSP324(2003) 데이터 시트보기 (PDF) - Infineon Technologies
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BSP324 Datasheet PDF : 8 Pages
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SIPMOS® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
Rev. 1.0
BSP324
Product Summary
VDS
400 V
RDS(on)
25 Ω
ID
0.17 A
SOT-223
Type
BSP324
Package
SOT-223
Ordering Code Tape and Reel Information Marking
Q67000-S215 E6327: 1000 pcs/reel
BSP324
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TA=25°C
TA=70°C
Pulsed drain current
TA=25°C
Reverse diode dv/dt
ID puls
dv/dt
IS=0.17A, VDS=320V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
VGS
Power dissipation
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Ptot
Tj , Tstg
Value
0.17
0.14
0.68
6
±20
Class 1
1.8
-55... +150
55/150/56
Unit
A
kV/µs
V
W
°C
Page 1
2003-02-21
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