CP309(2003) 데이터 시트보기 (PDF) - Central Semiconductor
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CP309 Datasheet PDF : 2 Pages
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PROCESS CP309
Power Transistor
NPN - Low Saturation Transistor Chip
CentralTM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
41.3 x 41.3 MILS
9.0 MILS
9.5 x 9.2 MILS
12.8 x 10.2 MILS
Al - 30,000Å
Au - 18,000Å
GROSS DIE PER 4 INCH WAFER
6,670
PRINCIPAL DEVICE TYPES
CMPT3090L
CXT3090L
CZT3090L
CMXT3090L
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (15- September 2003)
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