Thermal Characteristics
DN3545
Package
TO-92
ID (continuous)*
136mA
ID (pulsed)
1.6A
Power Dissipation
@ TA = 25°C
0.74W
TO-243AA
200mA
300mA
1.6†
* ID (continuous) is limited by max rated Tj.
† Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
θjc
°C/W
125
15
θja
°C/W
170
78†
IDR*
136mA
200mA
IDRM
1.6A
300mA
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
BVDSX
VGS(OFF)
∆VGS(OFF)
IGSS
ID(OFF)
Parameter
Drain-to-Source
Breakdown Voltage
Gate-to-Source OFF Voltage
Change in VGS(OFF) with Temperature
Gate Body Leakage Current
Drain-to-Source Leakage Current
Min Typ Max Unit
450
V
–1.5
–3.5
V
4.5 mV/°C
100
nA
1.0
µA
1.0
mA
IDSS
Saturated Drain-to-Source Current
200
RDS(ON)
Static Drain-to-Source
ON-State Resistance
mA
20
Ω
∆RDS(ON) Change in RDS(ON) with Temperature
1.1
GFS
Forward Transconductance
150
CISS
Input Capacitance
360
COSS
Common Source Output Capacitance
40
CRSS
Reverse Transfer Capacitance
15
td(ON)
Turn-ON Delay Time
20
tr
Rise Time
30
td(OFF)
Turn-OFF Delay Time
30
tf
Fall Time
40
VSD
Diode Forward Voltage Drop
1.8
trr
Reverse Recovery Time
800
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
%/°C
m
pF
ns
V
ns
Conditions
VGS = -5V, ID = 100µA
VDS = 25V, ID= 10µA
VDS = 25V, ID= 10µA
VGS = ± 20V, VDS = 0V
VGS = -5V, VDS = Max Rating
VGS = -5V, VDS = 0.8 Max Rating
TA = 125°C
VGS = 0V, VDS = 15V
VGS = 0V, ID = 150mA
VGS = 0V, ID = 150mA
ID = 100mA, VDS = 10V
VGS = -5V, VDS = 25V
f = 1 MHz
VDD = 25V,
ID = 150mA,
RGEN = 25Ω,
VGS = 0V to -10V
VGS = -5V, ISD = 150mA
VGS = -5V, ISD = 150mA
Switching Waveforms and Test Circuit
VDD
0V
INPUT
-10V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
PULSE
GENERATOR
Rgen
INPUT
RL
OUTPUT
D.U.T.
2