IXDA20N120AS 데이터 시트보기 (PDF) - IXYS CORPORATION
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IXDA20N120AS Datasheet PDF : 4 Pages
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Symbol
Cies
C
oes
Cres
Q
g
t
d(on)
tr
td(off)
tf
Eon
Eoff
RthJC
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V = 25 V, V = 0 V, f = 1 MHz
CE
GE
1000
pF
150
pF
70
pF
I = 20 A, V = 15 V, V = 0.5 V
C
GE
CE
CES
Inductive load, TJ = 125°C
IC = 20 A, VGE = ±15 V,
VCE = 600 V, RG = 68 W
70
nC
60
ns
60
ns
400
ns
50
ns
3.5
mJ
2.1
mJ
0.63 K/W
IXDA 20N120 AS
TO-263 AB
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
8.00 8.89
9.65 10.29
6.22 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.20
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.315 .350
.380 .405
.245 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .008
.018 .029
© 2000 IXYS All rights reserved
2-4
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