INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSC5386
DESCRIPTION
·High Collector-Base Voltage-
: VCBO = 1500V(Min)
·High Switching Speed
·Built-in Damper Diode
APPLICATIONS
·Designed for use in high definition color display
horizontal deflection output application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
16
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn