M36W416TG, M36W416BG
Table 6. DC Characteristics
Symbol
Parameter
Device
Test Condition
Min Typ Max Unit
ILI Input Leakage Current
Flash & SRAM
0V ≤ VIN ≤ VDDQF
±1 µA
ILO Output Leakage Current
Flash
SRAM
0V ≤ VOUT ≤ VDDQF
0V ≤ VOUT ≤ VDDQF,
SRAM Outputs Hi-Z
±10 µA
±1 µA
Flash
EF = VDDQF ± 0.2V
RPF = VDDQ ± 0.2V
15
50 µA
IDDS VDD Standby Current
SRAM
E1S ≥ VDDS – 0.2V
VIN ≥ VDDS – 0.2V or VIN
≤ 0.2V
f = fmax (A0-A17 and DQ0-
DQ15 only)
f = 0 (GS, WS, UBS and LBS)
7
15 µA
E1S ≥ VDDS – 0.2V
VIN ≥ VDDS – 0.2V or
VIN ≤ 0.2V, f = 0
7
15 µA
IDDD Supply Current (Reset)
Flash
RPF = VSSF ± 0.2V
15
50 µA
IDD Supply Current
SRAM
f = fmax = 1/AVAV,
VIN ≤ 0.2V, IOUT = 0 mA
f = 1MHz,
VIN ≤ 0.2V, IOUT = 0 mA
5.5 12 mA
1.5
3 mA
IDDR Supply Current (Read)
Flash
EF = VIL, GF = VIH, f = 5 MHz
10
20 mA
IDDW Supply Current (Program)
Flash
Program in progress
VPPF = 12V ± 5%
Program in progress
VPPF = VDDF
10
20 mA
10
20 mA
IDDE Supply Current (Erase)
Flash
Erase in progress
VPPF = 12V ± 5%
Erase in progress
VPPF = VDDF
5
20 mA
5
20 mA
IDDES
Supply Current
(Program/Erase Suspend)
Flash
EF = VDDQF ± 0.2V,
Erase suspended
50 µA
IPP1
Program Current
(Read or Standby)
Flash
VPPF > VDDF
400 µA
IPP2
Program Current
(Read or Standby)
Flash
VPPF ≤ VDDF
5
µA
IPPR Program Current (Reset)
Flash
RPF = VSSF ± 0.2V
5
µA
IPPW
Program Current
(Program)
Flash
VPPF = 12V ± 0.5V
Program in progress
VPPF = VDDF
Program in progress
10 mA
5 mA
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