NTE2306 데이터 시트보기 (PDF) - NTE Electronics

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NTE2306

Silicon Complementary Transistors High Voltage Power Amplifier

NTE Electronics 

Electrical Charactertistics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics (Note 2)

DC Current Gain

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Base–Emitter ON Voltage

Dynamic Characteristics

hFE

VCE(sat)

VBE(sat)

VBE(on)

VCE = 2V, IC = 8A

VCE = 4V, IC = 16A

IC = 8A, IB = 0.8A

IC = 16A, IB = 2A

IC = 16A, IB = 2A

VCE = 4V, IC = 16A

15 35 –

8 15 –

–

– 2.0 V

–

– 3.5 V

–

– 3.9 V

–

– 3.9 V

Current–Gain Bandwidth Product

fT

VCE = 20V, IC = 1A, f = 0.5MHz,

Note 3

1.0 –

– MHz

Output Capacitance

Cob VCB = 10V, IE = 0, f = 0.1MHz

–

– 800 pF

Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≥ 2%.

Note 3. fT = |hFE| S ftest.

.600

(15.24)

C

.060 (1.52)

.173 (4.4)

.156

(3.96)

Dia.

BCE

.550

(13.97) .430

(10.92)

.500

(12.7)

Min

.055 (1.4)

.216 (5.45)

.015 (0.39)

NOTE: Dotted line indicates that

case may have square corners

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