STPS30120C 데이터 시트보기 (PDF) - STMicroelectronics
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STPS30120C Datasheet PDF : 8 Pages
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Characteristics
STPS30120C
Figure 6.
Non repetitive surge peak forward Figure 7.
current versus overload duration
(maximum values, per diode)
Relative variation of thermal
impedance junction to ambient
versus pulse duration
IM(A)
180
160
140
120
100
80
60
40
IM
20
0
1.E-03
t
δ=0.5
t(s)
1.E-02
1.E-01
Tc=25°C
Tc=75°C
Tc=125°C
1.E+00
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4
0.3 δ = 0.2
δ = 0.1
0.2
Single pulse
0.1
0.0
1.E-03
1.E-02
T
tp(s)
1.E-01
δ=tp/T
tp
1.E+00
Figure 8.
Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
IR(mA)
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
0
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
Tj=25°C
VR(V)
10 20 30 40 50 60 70 80 90 100 110 120
Figure 9.
Junction capacitance versus
reverse voltage applied
(typical values, per diode)
C(pF)
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
100
VR(V)
10
1
10
100
Figure 10. Forward voltage drop versus
forward current (per diode)
IFM(A)
100
Tj=125°C
(maximum values)
Tj=125°C
(typical values)
10
Tj=25°C
(maximum values)
Figure 11.
18 Iarm (A)
Reverse safe operating area
(tp < 1 µs and Tj < 150 °C)
17
16
15
14
13
12
VFM(V)
1
11
Varm (V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
120
130
140
150
160
170
4/8
Doc ID 11213 Rev 3
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