Philips Semiconductors
0.95 V starting power unit
Preliminary specification
TEA1202TS
9 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
Vn
voltage on any pin
Tj
Tamb
Tstg
Ves
junction temperature
ambient temperature
storage temperature
electrostatic handling voltage
CONDITIONS
shut-down mode
operating mode
notes 1 and 2
MIN. MAX.
−0.2
+6.5
−0.2
+5.5
−40
+150
−20
+80
−40
+125
Class II
UNIT
V
V
°C
°C
°C
V
Notes
1. ESD specification is in accordance with the JEDEC standard:
a) Human Body Model (HBM) tests are carried out by discharging a 100 pF capacitor through a 1.5 kΩ series
resistor.
b) Machine Model (MM) tests are carried out by discharging a 200 pF capacitor via a 0.75 µH series inductor.
2. Exception is pin ILIM: 1000 V HBM.
10 THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth(j-a)
thermal resistance from junction to ambient in free air
11 QUALITY SPECIFICATION
In accordance with “SNW-FQ-611D”.
VALUE
140
UNIT
K/W
12 CHARACTERISTICS
Tamb = −20 to +80 °C; all voltages are measured with respect to ground; positive currents flow into the IC; unless
otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
DC-to-DC converter
UPCONVERSION; pin U/D = LOW
VI(up)
VO(up)
VI(start)
VO(uvlo)
input voltage
output voltage
start-up input voltage
undervoltage lockout voltage
IL < 10 mA
note 1
DOWNCONVERSION; pin U/D = HIGH
VI(dwn)
VO(dwn)
input voltage
output voltage
note 2
REGULATION
∆VO(wdw)
output voltage window size as a PWM mode
function of output voltage
VI(start) −
5.50 V
VO(uvlo) −
5.50 V
0.93 0.96 1.00 V
2.0
2.2
2.4
V
VO(uvlo) −
1.30 −
5.50 V
5.50 V
1.5
2.0
2.5
%
2002 Mar 14
11