µ PA1813
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
50
VGS = −2.5 V
40
30
20
−0.01
TA = 125˚C
75˚C
25˚C
−25˚C
−0.1
−1
−10
ID - Drain Current - A
−100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
30
VGS = −4.5 V
TA = 125˚C
75˚C
20
25˚C
−25˚C
10
−0.01
−0.1
−1
−10
ID - Drain Current - A
−100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
ID = −2.5 A
40
30
20
10
0
−2
−4
−6
−8
−10
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
30
VGS = −4.0 V
TA = 125˚C
75˚C
25˚C
20
−25˚C
10
−0.01
−0.1
−1
−10
ID - Drain Current - A
−100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
ID = −2.5 A
VGS = −2.5 V
35
30
−4.0 V
25
−4.5 V
20
15
10
−50
0
50
100
150
Tch - Channel Temperature - ˚C
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
f = 1 MHz
VGS = 0 V
1000
100
Ciss
Coss
Crss
10
−1
−10
VDS - Drain Source Voltage - V
−100
4
Data Sheet D13294EJ1V0DS00