µ PA1816
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
RDS(on)4
Ciss
VDS = −12 V, VGS = 0 V
VGS = m 8.0 V, VDS = 0 V
VDS = −10 V, ID = −1.0 mA
VDS = −10 V, ID = −4.5 A
VGS = −4.5 V, ID = −4.5 A
VGS = −4.0 V, ID = −4.5 A
VGS = −2.5 V, ID = −4.5 A
VGS = −1.8 V, ID = −2.5 A
VDS = −10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Crss f = 1.0 MHz
td(on)
VDD = −10 V, ID = −4.5 A
tr
VGS = −4.0 V
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
tf
QG
VDD = −10 V
QGS
VGS = −4.0 V
QGD
ID = −9.0 A
Body Diode Forward Voltage
VF(S-D) IF = 9.0 A, VGS = 0 V
Reverse Recovery Time
trr
IF = 9.0 A, VGS = 0 V
Reverse Recovery Charge
Qrr
di/dt = 100 A/ µs
MIN. TYP. MAX. UNIT
−1.0 µA
m 10 µA
−0.45 −0.75 −1.5 V
11 22
S
12.0 15 mΩ
12.5 16 mΩ
16.2 22.5 mΩ
23.7 41.5 mΩ
1570
pF
400
pF
240
pF
16
ns
132
ns
223
ns
295
ns
15
nC
3.0
nC
4.5
nC
0.82
V
490
ns
580
nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
RG
PG.
VGS (−)
0
τ
τ = 1µs
Duty Cycle ≤ 1%
RL
VDD
VGS (−)
VGS
Wave Form
10%
0
90%
VGS
VDS (−)
90%
VDS
VDS
0
Wave Form
td(on)
10% 10%
tr td(off)
90%
tf
ton
toff
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
IG = −2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet G16252EJ1V0DS