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025N06N 데이터 시트보기 (PDF) - Unspecified
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025N06N
OptiMOS Power-Transistor
Unspecified
025N06N Datasheet PDF : 10 Pages
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5
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8
9
10
Parameter
Symbol Conditions
IPD025N06N
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
-
C
oss
V
GS
=0 V,
V
DS
=30 V,
f
=1 MHz
-
C
rss
-
t
d(on)
-
t
r
V
DD
=30 V,
V
GS
=10 V,
-
I
D
=90 A,
t
d(off)
R
G,ext
,ext=1.6
W
-
t
f
-
Gate Charge Characteristics
5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Q
gs
-
Q
g(th)
-
Q
gd
V
DD
=30 V,
I
D
=90 A,
-
Q
sw
V
GS
=0 to 10 V
-
Q
g
-
V
plateau
-
Q
g(sync)
V
DS
=0.1 V,
V
GS
=0 to 10 V
-
Q
oss
V
DD
=30 V,
V
GS
=0 V
-
Reverse Diode
Diode continuous forward current
I
S
-
T
C
=25 °C
Diode pulse current
I
S,pulse
-
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=90 A,
T
j
=25 °C
-
Reverse recovery time
Reverse recovery charge
t
rr
V
R
=30 V,
I
F
=
I
S
,
-
Q
rr
d
i
F
/d
t
=100 A/µs
-
5)
See figure 16 for gate charge parameter definition
5200
1200
48
16
20
34
12
6500 pF
1500
96
- ns
-
-
-
24
- nC
14
-
13
17
23
-
71
83
4.7
-V
62
- nC
81
-
-
90 A
-
360
1.0
1.2 V
83
133 ns
105
nC
Rev.2.3
page 3
2012-12-20
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