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DG408BP45 데이터 시트보기 (PDF) - Dynex Semiconductor
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DG408BP45
Gate Turn-off Thyristor
Dynex Semiconductor
DG408BP45 Datasheet PDF : 19 Pages
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DG408BP45
5000
4000
Conditions:
T
j
= 125°C,
C
S
= 1.0µF,
dI
GQ
/dt = 30A/µs
3000
2000
V
DRM
0.75x V
DRM
0.5x V
DRM
1000
0
0
250
500
750
1000
1250
1500
On-state current I
T
- (A)
Fig.17 Turn-off energy vs on-state current
4500
4000
Conditions:
T
j
= 125°C,
C
S
= 1.0µF,
I
T
= 1000A
V
DRM
0.75x V
DRM
3500
3000
0.5x V
DRM
2500
10
20
30
40
50
60
Rate of rise of reverse gate current dI
GQ
/dt - (A/µs)
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current
11/19
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