MMBT2222AWT1G(2010) 데이터 시트보기 (PDF) - ON Semiconductor
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MMBT2222AWT1G Datasheet PDF : 6 Pages
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MMBT2222AWT1
200
IC/IB = 10
100
TJ = 25°C
70
50
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
30
td @ VEB(off) = 0
20
10
7.0
5.0
3.0
2.0
5.0 7.0 10
20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time
500
300
200
t′s = ts - 1/8 tf
100
70
50
tf
30
20
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
10
7.0
5.0
5.0 7.0 10
20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 6. Turn −Off Time
10
10
RS = OPTIMUM
f = 1.0 kHz
8.0
IC = 1.0 mA, RS = 150 W
500 mA, RS = 200 W
RS = SOURCE
RS = RESISTANCE
8.0
IC = 50 mA
100 mA, RS = 2.0 kW
100 mA
6.0
50 mA, RS = 4.0 kW
6.0
500 mA
1.0 mA
4.0
4.0
2.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (kHz)
50 100
Figure 7. Frequency Effects
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
Figure 8. Source Resistance Effects
30
20
Ceb
10
7.0
5.0
Ccb
3.0
2.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
20 30 50
500
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 10. Current−Gain Bandwidth Product
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