IGW25N120H3
Highspeedswitchingseriesthirdgeneration
HighspeedIGBTinTrenchandFieldstoptechnology
recommendedincombinationwithSiCDiodeIDH15S120
Features:
C
TRENCHSTOPTMtechnologyoffering
•bestinclassswitchingperformance:lessthan500µJtotal
switchinglossesachievable
•verylowVCEsat
•lowEMI
•maximumjunctiontemperature175°C
•qualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•completeproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
G
E
Applications:
•solarinverters
•uninterruptiblepowersupplies
•weldingconverters
•converterswithhighswitchingfrequency
Packagepindefinition:
1
2
3
•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter
KeyPerformanceandPackageParameters
Type
VCE
IC
VCEsat,Tvj=25°C
IGW25N120H3
1200V 25A
2.05V
Tvjmax
175°C
Marking
G25H1203
Package
PG-TO247-3
2
Rev.2.1,2014-02-27