BTS 780 GP
4.4 Electrical Characteristics (cont’d)
ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V
unless otherwise specified
Parameter
Symbol Limit Values Unit Test Condition
min. typ. max.
High-Side-Switches 1, 2
Static drain-source
on-resistance
RDS ON H –
Static drain-source
on-resistance
RDS ON H –
Leakage current
IHSLK
–
Body-diode forward-voltage VFH
–
@ IFH = 2 A
VFH
–
VFH
–
Clamp-diode leakage-
current (IFH + ISH)
ILKCL
–
34 40 mΩ ISH = 2 A
Tj = 25 °C
–
75 mΩ ISH = 2 A
–
10 µA VGH = VSH = 0 V
0.8 1.2 V Tj = – 40 °C
0.7 1.1 V Tj = 25 °C
0.5 0.8 V Tj = 150 °C
–
10 mA IFH = 2 A
Short Circuit to GND
Initial peak SC current
Initial peak SC current
Initial peak SC current
Initial peak SC current
ISCP
47 55 66 A Tj = – 40 °C
ISCP
35 44 54 A Tj = 25 °C
ISCP
29 36 45 A Tj = 85 °C
ISCP
21 27 34 A Tj = 150 °C
Short Circuit to VS
OFF-state examiner-
voltage
VEO
2
3
4
V
VGH = 0 V
Output pull-down-resistor RO
4
10 30 kΩ –
Open Circuit
Detection current
IOCD
0.05 –
1.2 A –
Data Sheet
12
1999-06-22