MBM29LV800TA-70/-90/-12/MBM29LV800BA-70/-90/-12
s ERASE AND PROGRAMMING PERFORMANCE
Parameter
Min.
Limits
Typ.
Max.
Sector Erase Time
—
1
10
Word Programming Time
Byte Programming Time
—
16
360
—
8
300
Chip Programming Time
—
8.4
25
Program/Erase Cycle
100,000
—
—
Unit
Comments
sec
Excludes programming time
prior to erasure
µs Excludes system-level
µs overhead
sec
Excludes system-level
overhead
cycles
—
s TSOP(I) PIN CAPACITANCE
Parameter
Symbol
Parameter Description
CIN
COUT
CIN2
Input Capacitance
Output Capacitance
Control Pin Capacitance
Note: Test conditions TA = 25°C, f = 1.0 MHz
Test Setup
VIN = 0
VOUT = 0
VIN = 0
s SOP PIN CAPACITANCE
Parameter
Symbol
Parameter Description
CIN
COUT
CIN2
Input Capacitance
Output Capacitance
Control Pin Capacitance
Note: Test conditions TA = 25°C, f = 1.0 MHz
Test Setup
VIN = 0
VOUT = 0
VIN = 0
s SON PIN CAPACITANCE
Parameter
Symbol
Parameter Description
CIN
Input Capacitance
COUT
Output Capacitance
CIN2
Control Pin Capacitance
Note: Test conditions TA = 25°C, f = 1.0 MHz
Test Setup
VIN = 0
VOUT = 0
VIN = 0
Typ.
Max.
Unit
7.5
9.5
pF
8
10
pF
10
13
pF
Typ.
Max.
Unit
7.5
9.5
pF
8
10
pF
10
13
pF
Typ.
Max.
Unit
7.5
9.5
pF
8
10
pF
10
13
pF
53