IRLL014NPbF
400
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + C gd
300
Ciss
200
Coss
100
Crss
0
A
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 2.0A
16
V DS = 44V
V DS = 28V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
0
3
6
9
12
15
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150°C
TJ = 25°C
1
0.1
0.4
VGS = 0V A
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10µs
10
100µs
1ms
1
10ms
TA = 25°C
TJ = 150°C
Single Pulse
0.1
1
10
A
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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