JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T TO-92MOD Plastic-Encapsulate Transistors
KSA910 TRANSISTOR (PNP)
TO – 92M
TO – 92MOD
1. COLLECTOR
FEATURES
z General Purpose Amplifier Transistor
1. EMITTER
2. BASE
2. COLLECTOR
3. EMITTER
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-150
-150
-5
-50
800
156
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC= -100µA,IE=0
-150
V
V(BR)CEO IC=-5mA,IB=0
-150
V
V(BR)EBO IE=-10µA,IC=0
-5
V
ICBO
VCB=-150V,IE=0
-0.1
μA
IEBO
VEB=-5V,IC=0
-0.1
μA
hFE
VCE=-5V, IC=-10mA
40
240
VCE(sat) IC=-10mA,IB=-1mA
-0.8
V
Cob
VCB=-10V,IE=0, f=1MHz
5
pF
fT
VCE=-30V,IC=-10mA
100
MHz
CLASSIFICATION OF hFE
RANK
RANGE
R
40-80
O
70-140
Y
120-240
www.cj-elec.com
1
C,Mar,2016